sot-89-3l 1. base 2. collector 3. emitter features z small flat package z high current application z complementary to kta1664 maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =1ma,i e =0 35 v collector-emitter breakdown voltage v (br)ceo i c =10ma,i b =0 30 v emitter-base breakdown voltage v (br)ebo i e =1ma,i c =0 5 v collector cut-off current i cbo v cb =35v,i e =0 100 na emitter cut-off current i ebo v eb =5v,i c =0 100 na h fe(1) v ce =1v, i c =100ma 100 320 dc current gain h fe(2) v ce =1v, i c =700ma 35 collector-emitter saturation voltage v ce(sat) i c =500ma,i b =20ma 0.5 v base-emitter voltage v be v ce =1v, i c =10ma 0.5 0.8 v collector output capacitance c ob v cb =10v,i e =0, f=1mhz 13 pf transition frequency f t v ce =5v,i c =10ma 120 mhz classification of h fe(1) rank o y range 100 C 200 160 C 320 marking po py symbol parameter value unit v cbo collector-base voltage 35 v v ceo collector-emitter voltage 30 v v ebo emitter-base voltage 5 v i c collector current 800 ma p c collector power dissipation 500 mw r ja thermal resistance from junction to ambient 250 / w t j junction temperature 150 t stg storage temperature -55~+150 KTC4376 transistor (npn) 1 date:2011/05 www.htsemi.com semiconductor jinyu
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